The wide class of correlated electron materials include transition metal oxides (TMO’s), halides and chalcogenides.
Beyond highest purity single crystals, molecular beam epitaxy allows the team of SBQMI researchers to grow these materials one layer of atoms at a time to create atomically precise interfaces between different materials. It is often these interfaces, rather than the properties of the materials, that enable novel device performances.
SBQMI researchers are focused on better understanding, controlling, and tailoring these properties at the solid-vacuum interface (the surface) and have developed world leading capabilities in REIXS, STM, Spin+ARPES, µ-SR, β-NMR, resonant x-ray reflectometry, magnetic x-ray dichroism, and electron microscopy combined with electron energy loss spectroscopy, to characterize these materials in situ, as they are grown.
This work has laid a solid foundation for future efforts in the scope of the CFREF program to systematically explore and elucidate the properties of buried heterostructure interfaces – and from there, devices.